Reducing MOSFET 1/f noise and power consumption by switched biasing
نویسندگان
چکیده
منابع مشابه
“ Switched Biasing ” reduces both MOSFET 1 / f Noise and Power Consumption
“Switched Biasing” is proposed as a new circuit technique that exploits an intriguing physical effect: cycling a MOS transistor between strong inversion and accumulation reduces its intrinsic 1/f noise. The technique is implemented in a 0.8μm CMOS sawtooth oscillator by periodically off-switching of the bias currents during time intervals that they are not contributing to the circuit operation....
متن کاملAnalysis of 1=f Noise in Switched MOSFET Circuits
Analysis of 1 noise in MOSFET circuits is typically performed in the frequency domain using the standard stationary 1 noise model. Recent experimental results, however, have shown that the estimates using this model can be quite inaccurate especially for switched circuits. In the case of a periodically switched transistor, measured 1 noise power spectral density (psd) was shown to be significan...
متن کاملReducing power consumption of instruction ROMs by exploiting instruction frequency
This paper proposes a new approach to reducing the power consumption of instruction ROMs for embedded systems. The power consumption of instruction ROMs strongly depends on the switching activity of bit-lines. If a read bit-value indicates ’0’, the precharged bitline is discharged. In this scenario, a bit-line switching takes place and consumes power. Otherwise, the precharged bit-line level is...
متن کاملReducing Register File Power Consumption by Exploiting Value Lifetime Characteristics
With the trend towards wider instruction issue and larger instruction windows, register les grow both in terms of size and number of read/write ports. However, large multi-ported register les consume a substantial amount of power, and may also limit the cycle time of a processor. This work attempts to address these issues by taking advantage of the facts that many register accesses show extreme...
متن کاملNoise in nanometric s-Si MOSFET for low- power applications
Abstract. This paper reports on the influence of the gate length reduction on the noise performance of strained-Si surface channel MOSFETs for very low power applications. When the gate length is reduced from 100nm to 20nm an increase of the current gain is achieved that nearly doubles the cut-off frequency of the transistor. This is counterbalanced by a deterioration of the noise figure and th...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 2000
ISSN: 0018-9200,1558-173X
DOI: 10.1109/4.848208